亚阈值斜率因子由m：[1+ Cd/Cox]给出
Cd =耗尽电容
Cox =氧化物电容
我使用的是32nm V2.0 Bulk CMOS PTM模型文件......
vt= 26e-003; %thermal voltage%
eo= 8.854e-14; %permittivity of free space%
er= 3.9; % relative permittivity of Silicon dioxide%
toxe= 7.5e-010; %electrical oxide thickness%
eox= eo*er; %permittivity of Silicon dioxide%
cox= eox/toxe; %oxide capacitance%
esir= 11.68; % relative permittivity of Silicon%
esi= esir*eo; %permittivity of Silicon%
nch= 4.1e+018 ; %channel concentration%
ni= 1.45e+010; %intrinsic concentration%
q= 1.602e-019; %electron charge%
num= 4*esi*vt*log(nch/ni);
deno= nch*(q);
xdep= (sqrt(num/deno)); % Maximum depletion width%
cdep= esi/xdep; %depletion layer capacitance%
m= 1+(cdep/cox) %subthreshold slope factor%
我无法在PTM模型文件中找到通道掺杂浓度的值...所以我假设了这个值（粗略地从图中提取）..使用上面提到的值，子阈值斜率因子大约是我读过很少的文章，他们已经提到过批量CMOS m大约是1.4 ......我可以知道哪个值必须用于模拟，我该如何证明这一点？
The graph from which i have roughly extracted the Nch value... 已附上PTM模型文件的链接：http://ptm.asu.edu/latest.htmland我使用32nm PTM模型用于金属栅极/高k CMOS：V2.0
