Question

因此，我最近安装了一个项目，该项目在设计中实现了生成的MCB。我之前从未调试过IP内核，因此您必须原谅我的解决方案很明显。我一直在解决这一问题一两天，但似乎无法解决。

首先，我已经阅读了几次UG388，UG406，UG416文档，并做了一些没有运气的研究。

据我了解的参数，我从配置1中获得了MCB设置：

    localparam C3_PORT_ENABLE             = 6'b111111;
    localparam C3_PORT_CONFIG             =  "B32_B32_R32_R32_R32_R32";
    localparam C3_P0_PORT_MODE             =  "BI_MODE";
    localparam C3_P1_PORT_MODE             =  "BI_MODE";
    localparam C3_P2_PORT_MODE             =  "RD_MODE";
    localparam C3_P3_PORT_MODE             =  "RD_MODE";
    localparam C3_P4_PORT_MODE             =  "RD_MODE";
    localparam C3_P5_PORT_MODE             =  "RD_MODE";

并设置为与DDR2内存接口。我不确定其他什么信息对这个问题很重要，但是如果您需要，我可以发布更多信息。以下是一些我认为会有所帮助的附加参数：

localparam C3_NUM_DQ_PINS          = 16;
localparam C3_MEM_ADDR_WIDTH       = 13;
localparam C3_MEM_BANKADDR_WIDTH   = 3;
localparam C3_MEM_ADDR_ORDER       = "ROW_BANK_COLUMN";
localparam C3_P0_MASK_SIZE          = 4;
localparam C3_P0_DATA_PORT_SIZE     = 32;

此外，我应该提到设计仅使用单个端口（p0）。在行为上，生成的MCB带有一个包含TB的Example_design，并且我成功运行了，没有任何错误。

现在，我正在尝试设置自己的tb来执行简单的读写操作。我可以写入32位，也可以读取32位，但是问题是存储单元每次都按4-16位值的顺序读取。这意味着它写入的数据的一半是“ XXXX”，无法弄清楚如何用有意义的数据填充该空间。这是我的输出（最后几行显示了该问题，第一部分只是初始化的内容，可能会有所帮助）：

ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 438401.0 ps WARNING: 200 us is required before CKE goes active.
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 460801.0 ps INFO: Precharge All
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 486401.0 ps INFO: Load Mode 2
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 486401.0 ps INFO: Load Mode 2 High Temperature Self Refresh rate = 1X (0C-85C)
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 499201.0 ps INFO: Load Mode 3
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 DLL Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 Output Drive Strength = Full
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 ODT Rtt = 50 Ohm
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 Additive Latency =           0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 OCD Program = OCD Exit
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 DQS_N Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 RDQS Enable = Disabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 512001.0 ps INFO: Load Mode 1 Output Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 Burst Length =  4
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 Burst Order = Sequential
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 CAS Latency =           5
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 Test Mode = Normal
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 DLL Reset = Reset DLL
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 Write Recovery =           5
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 524801.0 ps INFO: Load Mode 0 Power Down Mode = Fast Exit
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 537601.0 ps INFO: Precharge All
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 563201.0 ps INFO: Refresh  
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 691201.0 ps INFO: Refresh  
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 Burst Length =  4
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 Burst Order = Sequential
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 CAS Latency =           5
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 Test Mode = Normal
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 DLL Reset = Normal
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 Write Recovery =           5
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 819201.0 ps INFO: Load Mode 0 Power Down Mode = Fast Exit
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 DLL Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 Output Drive Strength = Full
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 ODT Rtt = 50 Ohm
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 Additive Latency =           0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 OCD Program = OCD Default
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 DQS_N Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 RDQS Enable = Disabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 832001.0 ps INFO: Load Mode 1 Output Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 DLL Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 Output Drive Strength = Full
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 ODT Rtt = 50 Ohm
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 Additive Latency =           0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 OCD Program = OCD Exit
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 DQS_N Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 RDQS Enable = Disabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Load Mode 1 Output Enable = Enabled
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 844801.0 ps INFO: Initialization Sequence is complete
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 864001.0 ps INFO: Precharge All
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 1382401.0 ps INFO: Activate  bank 0 row 0000
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .cmd_task: at time 1395201.0 ps INFO: Write     bank 0 col 080, auto precharge 0
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .main: at time 1401601.0 ps INFO: Sync On Die Termination = 1
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .data_task: at time 1409601.0 ps INFO: WRITE @ DQS= bank = 0 row = 0000 col = 00000080 data = 5678
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .data_task: at time 1411201.0 ps INFO: WRITE @ DQS= bank = 0 row = 0000 col = 00000081 data = 1234
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .data_task: at time 1412801.0 ps INFO: WRITE @ DQS= bank = 0 row = 0000 col = 00000082 data = xxxx
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .data_task: at time 1414401.0 ps INFO: WRITE @ DQS= bank = 0 row = 0000 col = 00000083 data = xxxx
ReadWrite_MIG_tb.\MEM_INST3.u_mem_c3 .main: at time 1422401.0 ps INFO: Sync On Die Termination = 0

在将p0_cmd放入cmd FIFO时，p0_wr_count为3（以防万一，我在其中填充了一些额外的字符）。 example_design tb还会执行4次连续写入，但是它们不是“ XXXX”。

我一直在将波形与tb和UG388进行比较，似乎确实在正确地复制了波形，但是不确定是什么原因引起的。如何用数据填充“ XXXX”或阻止其写入多余的值？

任何帮助将不胜感激！

Answer 1

似乎在几天后重新启动计算机后，问题似乎已经解决。我不记得进行了任何重大更改，现在无法复制我先前描述的行为。

目前，我可以认为此问题已解决，但是如果发现任何新问题，我会进行更新。我以为这是微不足道的，但这是无法解释的。

MIG MCB意外的写行为

1 个答案: