在PIC18F4550的数据手册中,写入闪存程序存储器的示例如下:
MOVLW D'64’ ; number of bytes in erase block
MOVWF COUNTER
MOVLW BUFFER_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW BUFFER_ADDR_LOW
MOVWF FSR0L
MOVLW CODE_ADDR_UPPER ; Load TBLPTR with the base
MOVWF TBLPTRU ; address of the memory block
MOVLW CODE_ADDR_HIGH
MOVWF TBLPTRH
MOVLW CODE_ADDR_LOW
MOVWF TBLPTRL
READ_BLOCK
TBLRD*+ ; read into TABLAT, and inc
MOVF TABLAT, W ; get data
MOVWF POSTINC0 ; store data
DECFSZ COUNTER ; done?
BRA READ_BLOCK ; repeat
MODIFY_WORD
MOVLW DATA_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW DATA_ADDR_LOW
MOVWF FSR0L
MOVLW NEW_DATA_LOW ; update buffer word
MOVWF POSTINC0
MOVLW NEW_DATA_HIGH
MOVWF INDF0
ERASE_BLOCK
MOVLW CODE_ADDR_UPPER ; load TBLPTR with the base
MOVWF TBLPTRU ; address of the memory block
MOVLW CODE_ADDR_HIGH
MOVWF TBLPTRH
MOVLW CODE_ADDR_LOW
MOVWF TBLPTRL
BSF EECON1, EEPGD ; point to Flash program memory
BCF EECON1, CFGS ; access Flash program memory
BSF EECON1, WREN ; enable write to memory
BSF EECON1, FREE ; enable Row Erase operation
BCF INTCON, GIE ; disable interrupts
MOVLW 55h
Required MOVWF EECON2 ; write 55h
Sequence MOVLW 0AAh
MOVWF EECON2 ; write 0AAh
BSF EECON1, WR ; start erase (CPU stall)
BSF INTCON, GIE ; re-enable interrupts
TBLRD*- ; dummy read decrement
MOVLW BUFFER_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW BUFFER_ADDR_LOW
MOVWF FSR0L
MOVLW D’2’
MOVWF COUNTER1
WRITE_BUFFER_BACK
MOVLW D’32’ ; number of bytes in holding register
MOVWF COUNTER
WRITE_BYTE_TO_HREGS
MOVF POSTINC0, W ; get low byte of buffer data
MOVWF TABLAT ; present data to table latch
TBLWT+* ; write data, perform a short write
; to internal TBLWT holding register.
DECFSZ COUNTER ; loop until buffers are full
BRA WRITE_WORD_TO_HREGS
PROGRAM_MEMORY
BSF EECON1, EEPGD ; point to Flash program memory
BCF EECON1, CFGS ; access Flash program memory
BSF EECON1, WREN ; enable write to memory
BCF INTCON, GIE ; disable interrupts
MOVLW 55h
Required MOVWF EECON2 ; write 55h
Sequence MOVLW 0AAh
MOVWF EECON2 ; write 0AAh
BSF EECON1, WR ; start program (CPU stall)
DECFSZ COUNTER1
BRA WRITE_BUFFER_BACK
BSF INTCON, GIE ; re-enable interrupts
BCF EECON1, WREN ; disable write to memory
但是我不知道如何解释这段代码,我的意思是:
-我在哪条指令中选择了要开始写入的内存位置
-我在哪里写要写的说明
例如,在我的主要代码旁边,如果我想用Flash编写,则在PORTB的某些I / O中检测到5v之后的下一条指令:
movlw 0CEh
movwf TRISA
我在数据表的示例代码中需要做哪些更改?还是我误会“写入闪存程序存储器”是什么意思?
答案 0 :(得分:0)
我在哪条指令中选择了要开始写入的内存位置
MOVLW CODE_ADDR_UPPER ; Load TBLPTR with the base
MOVWF TBLPTRU ; address of the memory block
MOVLW CODE_ADDR_HIGH
MOVWF TBLPTRH
MOVLW CODE_ADDR_LOW
MOVWF TBLPTRL
-我在哪里写要写的说明
MOVLW BUFFER_ADDR_HIGH ; point to buffer
MOVWF FSR0H
MOVLW BUFFER_ADDR_LOW
MOVWF FSR0L